This type of suppressor has the characteristic of "electric pry" and is usually related to 4-layer NPNP silicon controlled bipolar devices or plasma gas/GDT devices.
When conducting, the driving circuit should be able to provide sufficient charging current to quickly raise the voltage between the MOSFET gate and source to the required value, ensuring that the switch tube can be quickly turned on and there is no high-frequency oscillation of the rising edge.
When there is no voltage applied between the gate and source during operation, the PN junction between the drain and source is reversed, so there is no conductive channel. Even if a voltage is applied between the drain and source, the conductive channel is closed and no current flows through.
During operation, no voltage is applied between the gate and source. Unlike enhanced MOS transistors, there is a conductive channel between the drain and source. Therefore, as long as a forward voltage is applied between the drain and source, a drain current will be generated.
In practical applications, the frequency of thyristor switching is mainly affected by the following factors
Controllable silicon and IGBT are two commonly used power semiconductor devices in the field of modern power electronics.
